document number: 88735 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated ultrafast rectifier sbyv26c vishay general semiconductor features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ideal for printed circuit boards ? ultrafast reverse recovery time ? low forward voltage drop ? low leakage current ? low switching losses, high efficiency ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-204al, molded plastic over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end note (1) peak reverse energy measured with 8/20 s surge primary characteristics i f(av) 1.0 a v rrm 600 v i fsm 30 a t rr 30 ns v f 1.3 v t j max. 175 c do-204al (do-41) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit maximum repetitive pe ak reverse voltage v rrm 600 v maximum rms voltage v rms 420 v maximum dc blocking voltage v dc 600 v maximum average forw ard rectified current 0.375" (9.5 mm) lead length at t l = 85 c (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a non repetitive peak reverse energy e rsm (1) 5.0 mj operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88735 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sbyv26c vishay general semiconductor notes (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) l ead length, mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) cop per pads (2) thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit minimum avalanche breakdown voltage 100 a v br 600 v maximum instantaneous forward voltage 1.0 a t j = 25 c v f 2.5 v t j = 175 c 1.3 maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 165 c 150 max. reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 30 ns maximum junction capa citance 4.0 v, 1 mhz c j 45 pf maximum reverse recovery current slope i f = 1 a, v r = 30 v, di f /dt = - 1 a/s di r /dt 7.0 a/s thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance r ? ja (1) 70 c/w r ? jl (2) 16 ordering information (example) preferred p/n unit weight (g) preferred package code ba se quantity delivery mode sbyv26c-e3/54 0.339 54 5500 13" diameter paper tape and reel sbyv26c-e3/73 0.339 73 3000 ammo pack packaging sbyv26che3/54 (1) 0.339 54 5500 13" diameter paper tape and reel sbyv26che3/73 (1) 0.339 73 3000 ammo pack packaging 0 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 average forward rectied current (a) temperature (c) 0.4 0.2 mounted on p.c.b. lead mounted on heat s ink t a = ambient temperature t l = lead temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current (a) average power lo ss (w) d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
document number: 88735 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sbyv26c vishay general semiconductor fig. 3 - maximum non-repetiti ve peak forward surge current fig. 4 - typical instantaneous forward characteristics fig. 5 - typical reverse leakage characteristics fig. 6 - typical j unction capacitance fig. 7 - typical transient thermal impedance 1 10 100 1 100 10 peak forward s urge current (a) number of cycle s at 50 hz t j = t j max. 10 m s s ingle half s ine-wave 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 in s tantaneou s forward voltage (v) 0.01 0.1 10 100 1 in s tantaneou s forward current (a) t j = 125 c t j = 25 c t j = 165 c pul s e width = 300 s 1 % duty cycle 020 60 40 100 80 0.01 0.001 0.1 10 1 100 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 125 c t j = 25 c t j = 165 c rever s e voltage (v) junction capacitance (pf) 0.1 1 10 100 100 10 1 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p tran s ient thermal impedance (c/w) 0.01 0.1 1 10 100 100 10 1 t - pul s e duration ( s )
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88735 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sbyv26c vishay general semiconductor package outline dimensions in inches (millimeters) do-204al (do-41) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1)
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